2SA1049 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1049 Audio Frequency Amplifier Applications • • • • • Small package. High breakdown voltage: VCEO = −120 V High hFE: hFE = 200~700 Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) Complementary to 2SC2459. Unit: mm • Low noise: NF = 1dB (typ.), 10dB (max) www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature r.
KA1049ترانزیستور پی ان پی
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